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EMB18A04VB Datasheet

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Excelliance MOS · EMB18A04VB File Size : 609.96KB · 4 hits

Features and Benefits

▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q1 ▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q2 ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Q1 Q2 Junction-to-Case RθJC Junction-to-.

EMB18A04VB EMB18A04VB EMB18A04VB
TAGS
Dual
N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMB18A04VB
EMB10
EMB10FHA
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